IRFB18N50KPBF Vishay, IRFB18N50KPBF Datasheet

N CHANNEL MOSFET, 500V, 17A, TO-220

IRFB18N50KPBF

Manufacturer Part Number
IRFB18N50KPBF
Description
N CHANNEL MOSFET, 500V, 17A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr

Specifications of IRFB18N50KPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
290mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2830pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.29 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6.4 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
220000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.29Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB18N50KPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB18N50KPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFB18N50KPBF
Quantity:
1 500
Company:
Part Number:
IRFB18N50KPBF
Quantity:
70 000
Company:
Part Number:
IRFB18N50KPBF
Quantity:
25 780
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91100
S09-0015-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 17 A, dI/dt ≤ 376 A/µs, V
(Ω)
J
TO-220
= 25 °C, L = 2.5 mH, R
a
G
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
= 25 Ω, I
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
120
34
54
AS
= 17 A.
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.26
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50K
SiHFB18N50K
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Low R
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
Requirement
Ruggedness
and Current
IRFB18N50K, SiHFB18N50K
DS(on)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
500
370
220
1.8
7.8
17
11
68
17
22
10
d
Vishay Siliconix
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
N
V
A
A
Available
1

Related parts for IRFB18N50KPBF

IRFB18N50KPBF Summary of contents

Page 1

... Low R D • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching S • Hard Switched and High Frequency Circuits N-Channel MOSFET TO-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50K SiHFB18N50K = 25 °C, unless otherwise noted ° ...

Page 2

... IRFB18N50K, SiHFB18N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER a Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface a Maximum Junction-to-Case (Drain) Note measured at T approximately 90 ° SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current ...

Page 3

... S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K 100.00 10.00 1.00 5.0V 0.10 0.01 10 100 3.0 2.5 2.0 5.0V 1.5 1.0 0.5 0.0 10 100 Vishay Siliconix 150° 25° 100V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics 17A -60 -40 - 100 120 140 160 ° ...

Page 4

... IRFB18N50K, SiHFB18N50K Vishay Siliconix 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 17A 400V 250V 100V Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 SHORTED 100 1000 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS ...

Page 6

... IRFB18N50K, SiHFB18N50K Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 750 TOP 600 BOTTOM 450 300 150 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 7.6A 11A 17A 125 150 ° Current regulator Same type as D.U.T. ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91100. Document Number: 91100 S09-0015-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords