IRFB18N50KPBF Vishay, IRFB18N50KPBF Datasheet - Page 3

• Manufacturer Part Number: IRFB18N50KPBF
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB18N50KPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.29Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB18N50KPBF

Document Number: 91100
100.00
10.00
0.001
Fig 3. Typical Transfer Characteristics
1.00
0.10
0.01
Fig 1. Typical Output Characteristics
0.01
100
0.1
10
1
5.0
0.1
TOP
BOTTOM 5.0V
T J = 150°C
V DS , Drain-to-Source Voltage (V)
VGS
V GS , Gate-to-Source Voltage (V)
6.0
12V
10V
8.0V
7.0V
6.0V
5.5V
15V
T J = 25°C
1
7.0
20µs PULSE WIDTH
Tj = 25°C
V DS = 100V
20µs PULSE WIDTH
8.0
5.0V
10
9.0
10.0
100
0.01
100
0.1
10
Fig 2. Typical Output Characteristics
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM 5.0V
I =
D
17A
V DS , Drain-to-Source Voltage (V)
12V
10V
8.0V
7.0V
6.0V
5.5V
T , Junction Temperature ( C)
15V
Vs. Temperature
VGS
J
0
1
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
10
5.0V
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V
GS
°
=
10V
100
3