IRF710PBF Vishay, IRF710PBF Datasheet - Page 6
![N CHANNEL MOSFET, 400V, 2A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF710PBF
Manufacturer Part Number
IRF710PBF
Description
N CHANNEL MOSFET, 400V, 2A, TO-220
Manufacturer
Vishay
Specifications of IRF710PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
2A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
3.6ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1.2A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3.6 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
36000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF710PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF710PBF
Manufacturer:
IR
Quantity:
18 400
IRF710, SiHF710
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
91041_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
150
300
250
200
100
50
0
25
V
DD
Starting T
+
-
= 50 V
V
DD
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
0.89 A
1.3 A
2.0 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0508-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91041
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS