IRF710PBF Vishay, IRF710PBF Datasheet - Page 6

• Manufacturer Part Number: IRF710PBF
• Description: N CHANNEL MOSFET, 400V, 2A, TO-220
• Manufacturer: Vishay

Specifications of IRF710PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 3.6ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 36000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF710PBF

IRF710, SiHF710
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
91041_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
150
300
250
200
100
50
0
25
V
DD
Starting T
+
-
= 50 V
V
DD
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
0.89 A
1.3 A
2.0 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0508-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91041
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS