IRF710PBF Vishay, IRF710PBF Datasheet
IRF710PBF
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IRF710PBF Summary of contents
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... The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF710PbF SiHF710-E3 IRF710 SiHF710 = 25 °C, unless otherwise noted) C SYMBOL ° ...
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... IRF710, SiHF710 Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... V 25 °C 91041_03 = 25 °C C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 150 °C 0 91041_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF710, SiHF710 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
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... IRF710, SiHF710 Vishay Siliconix 400 MHz iss rss 300 oss iss 200 C oss 100 C rss Drain-to-Source Voltage ( 91041_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 320 200 Total Gate Charge (nC) 91041_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF710, SiHF710 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF710, SiHF710 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91041_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91041. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...