IRF710PBF Vishay, IRF710PBF Datasheet - Page 5

• Manufacturer Part Number: IRF710PBF
• Description: N CHANNEL MOSFET, 400V, 2A, TO-220
• Manufacturer: Vishay

Specifications of IRF710PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 3.6ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 36000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF710PBF

Document Number: 91041
S11-0508-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91041_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
91041_11
25
10
0.1
10
-2
1
10
50
-5
0 − 0.5
0.2
0.1
0.05
0.02
0.01
T
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
100
-4
Single Pulse
(Thermal Response)
This datasheet is subject to change without notice.
125
10
t
-3
1
150
, Rectangular Pulse Duration (s)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
0.1
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
IRF710, SiHF710
j
= P
P
DM
DM
D.U.T.
www.vishay.com/doc?91000
x Z
Vishay Siliconix
R
t
1
1
D
thJC
t
/t
d(off)
2
t
+ T
2
C
t
10
f
+
-
www.vishay.com
V
DD
5