IRF644PBF Vishay, IRF644PBF Datasheet - Page 5

• Manufacturer Part Number: IRF644PBF
• Description: N CHANNEL MOSFET, 250V, 14A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF644PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 49 ns
• Rise Time: 24 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.28Ohm
• Drain-source On-volt: 250V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF644PBF

Document Number: 91039
S11-0509-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91039_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
14
12
10
91039_11
2
8
6
4
0
25
10
0.1
10
-2
1
10
50
T
-5
0.05
0.02
0.01
0 − 0.5
0.2
0.1
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
100
-4
Single Pulse
(Thermal Response)
This datasheet is subject to change without notice.
125
10
150
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
0.1
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
IRF644, SiHF644
j
= P
P
DM
D.U.T.
DM
www.vishay.com/doc?91000
x Z
Vishay Siliconix
R
t
D
1
1
thJC
t
d(off)
/t
2
t
2
+ T
t
C
10
f
+
-
www.vishay.com
V
DD
5