IRF644PBF Vishay, IRF644PBF Datasheet - Page 5
![N CHANNEL MOSFET, 250V, 14A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF644PBF
Manufacturer Part Number
IRF644PBF
Description
N CHANNEL MOSFET, 250V, 14A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF644PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
49 ns
Rise Time
24 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.28Ohm
Drain-source On-volt
250V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF644PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF644PBF
Manufacturer:
IR
Quantity:
3 000
Part Number:
IRF644PBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 91039
S11-0509-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91039_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
14
12
10
91039_11
2
8
6
4
0
25
10
0.1
10
-2
1
10
50
T
-5
0.05
0.02
0.01
0 − 0.5
0.2
0.1
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
100
-4
Single Pulse
(Thermal Response)
This datasheet is subject to change without notice.
125
10
150
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
0.1
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
IRF644, SiHF644
j
= P
P
DM
D.U.T.
DM
www.vishay.com/doc?91000
x Z
Vishay Siliconix
R
t
D
1
1
thJC
t
d(off)
/t
2
t
2
+ T
t
C
10
f
+
-
www.vishay.com
V
DD
5