IRF644PBF Vishay, IRF644PBF Datasheet - Page 4
![N CHANNEL MOSFET, 250V, 14A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF644PBF
Manufacturer Part Number
IRF644PBF
Description
N CHANNEL MOSFET, 250V, 14A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF644PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
49 ns
Rise Time
24 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.28Ohm
Drain-source On-volt
250V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF644PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF644PBF
Manufacturer:
IR
Quantity:
3 000
Part Number:
IRF644PBF
Manufacturer:
IR
Quantity:
20 000
IRF644, SiHF644
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91039_06
91039_05
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
3000
2400
1800
1200
600
20
16
12
8
4
0
0
10
0
I
0
D
= 7.9 A
10
V
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
20
V
DS
= 50 V
30
V
V
C
C
C
DS
GS
iss
rss
oss
= 0 V, f = 1 MHz
= C
= 125 V
= C
= C
40
V
10
gs
gd
C
C
C
DS
ds
1
iss
oss
rss
+ C
+ C
= 200 V
gd
50
gd
For test circuit
see figure 13
, C
This datasheet is subject to change without notice.
ds
Shorted
60
70
91039_08
91039_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
10
1
3
2
0
-1
5
2
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.5
1
2
V
V
0.6
DS
SD
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
5
0.7
10
T
T
Single Pulse
150
C
J
by R
= 150 °C
= 25 °C
2
°
0.8
C
DS(on)
S11-0509-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
5
25
Document Number: 91039
10
°
0.9
C
2
2
V
100
1.0
10
1
10
GS
ms
µs
ms
= 0 V
5
µs
10
1.1
3