IRF644PBF Vishay, IRF644PBF Datasheet - Page 4

• Manufacturer Part Number: IRF644PBF
• Description: N CHANNEL MOSFET, 250V, 14A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF644PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 49 ns
• Rise Time: 24 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.28Ohm
• Drain-source On-volt: 250V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF644PBF

IRF644, SiHF644
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91039_06
91039_05
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
3000
2400
1800
1200
600
20
16
12
8
4
0
0
10
0
I
0
D
= 7.9 A
10
V
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
20
V
DS
= 50 V
30
V
V
C
C
C
DS
GS
iss
rss
oss
= 0 V, f = 1 MHz
= C
= 125 V
= C
= C
40
V
10
gs
gd
C
C
C
DS
ds
1
iss
oss
rss
+ C
+ C
= 200 V
gd
50
gd
For test circuit
see figure 13
, C
This datasheet is subject to change without notice.
ds
Shorted
60
70
91039_08
91039_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
10
1
3
2
0
-1
5
2
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.5
1
2
V
V
0.6
DS
SD
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
5
0.7
10
T
T
Single Pulse
150
C
J
by R
= 150 °C
= 25 °C
2
°
0.8
C
DS(on)
S11-0509-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
5
25
Document Number: 91039
10
°
0.9
C
2
2
V
100
1.0
10
1
10
GS
ms
µs
ms
= 0 V
5
µs
10
1.1
3