IRF644PBF Vishay, IRF644PBF Datasheet - Page 3
![N CHANNEL MOSFET, 250V, 14A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF644PBF
Manufacturer Part Number
IRF644PBF
Description
N CHANNEL MOSFET, 250V, 14A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF644PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
49 ns
Rise Time
24 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.28Ohm
Drain-source On-volt
250V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF644PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF644PBF
Manufacturer:
IR
Quantity:
3 000
Part Number:
IRF644PBF
Manufacturer:
IR
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91039
S11-0509-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91039_01
91039_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
Top
Bottom
-1
-1
Top
Bottom
V
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
This datasheet is subject to change without notice.
C
C
4.5 V
4.5 V
= 150 °C
= 25 °C
91039_03
91039_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
150
D
GS
= 7.9 A
= 10 V
°
C
V
5
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
25
6
20 40 60 80 100 120 140 160
°
C
IRF644, SiHF644
7
www.vishay.com/doc?91000
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3