SI4214DDY-T1-GE3 Vishay, SI4214DDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4214DDY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 30V, 8.5A
• Manufacturer: Vishay

Specifications of SI4214DDY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 19.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65022
S09-1817-Rev. B, 14-Sep-09
4.0
3.2
2.4
1.6
0.8
0.0
0
25
Power Derating, Junction-to-Foot
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
10
100
8
6
4
2
0
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
New Product
T
C
150
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
Power Derating, Junction-to-Ambient
150
25
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4214DDY
100
www.vishay.com
125
150
5