2N7002BKV NXP Semiconductors, 2N7002BKV Datasheet - Page 8

• Manufacturer Part Number: 2N7002BKV
• Description: MOSFET,NN CH,60V,0.34A,SOT666
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BKV

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Power Dissipation: RoHS Compliant

NXP Semiconductors
2N7002BKV
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
(1) T
(2) T
(1) maximum values
(2) typical values
(3) minimum values
D
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.0
1.0
0.0
−60
0.0
V
function of gate-source voltage; typical values
I
ambient temperature
D
amb
amb
DS
= 0.25 mA; V
> I
= 25 °C
= 150 °C
D
1.0
× R
0
DSon
DS
2.0
= V
(1)
(2)
(3)
60
GS
3.0
(1)
120
(2)
4.0
T
All information provided in this document is subject to legal disclaimers.
amb
017aaa043
017aaa045
V
GS
(°C)
(V)
Rev. 2 — 22 September 2010
180
5.0
Fig 11. Normalized drain-source on-state resistance
Fig 13. Input, output and reverse transfer
(pF)
C
(1) C
(2) C
(3) C
a
10
2.4
1.8
1.2
0.6
0.0
60 V, 340 mA dual N-channel Trench MOSFET
10
1
2
10
−60
as a function of ambient temperature; typical
values
f = 1 MHz; V
capacitances as a function of drain-source
voltage; typical values
a
−1
iss
oss
rss
=
-----------------------------
R
DSon 25°C
R
DSon
0
(
GS
1
= 0 V
(1)
(2)
(3)
)
60
2N7002BKV
10
120
V
© NXP B.V. 2010. All rights reserved.
T
DS
amb
017aaa044
017aaa046
(V)
(°C)
180
10
2
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