SI4922BDY-T1-GE3 Vishay, SI4922BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4922BDY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 30V, 8A
• Manufacturer: Vishay

Specifications of SI4922BDY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 2.5V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
50
- Case Temperature (°C)
75
J(max)
10
12
7
5
2
0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Package Limited
125
25
T
150
C
50
Current Derating*
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4922BDY
www.vishay.com
125
150
5