SI4922BDY-T1-GE3 Vishay, SI4922BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4922BDY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 30V, 8A
• Manufacturer: Vishay

Specifications of SI4922BDY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 2.5V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
I
D
V
= 250 µA
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
150 °C
0.6
50
75
0.01
100
0.1
0.8
10
1
0.1
25 °C
100
Limited by R
Safe Operating Area, Junction-to-Ambient
* V
1.0
DS
125
> minimum V
V
DS
150
DS(on)
1.2
- Drain-to-Source Voltage (V)
Single Pulse
1
T
*
A
GS
= 25 °C
at which R
DS(on)
10
is specified
0.10
0.08
0.06
0.04
0.02
0.00
100
80
60
40
20
0
0
10 µs
100 µs
1 ms
10 ms
100 ms
DC
0 .
0
On-Resistance vs. Gate-to-Source Voltage
0
1
Single Pulse Power, Junction-to-Ambient
100
1
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
S09-0704-Rev. B, 27-Apr-09
125 °C
0.1
25 °C
Document Number: 74459
5
6
7
1
I
D
8
= 5 A
9
1
10
0