GT50J325 Toshiba, GT50J325 Datasheet - Page 5

• Manufacturer Part Number: GT50J325
• Description: IGBT, 600V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT50J325

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 240W
• Rohs Compliant: Yes

30000
10000
3000
1000
300
100
100
300
100
0.3
0.1
30
10
80
60
40
20
30
10
0.1
0
3
1
0
1
Common collector
V GE = 0
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
*: Single pulse
Curves must be
derated linearly with
increase in
temperature.
I C max (pulse)*
I C max (continuous)
Tc = 25°C
0.3
DC operation
Collector-emitter voltage V
Collector-emitter voltage V
3
Tc = 125°C
1
1
Forward voltage V
Safe operating area
10
3
2
C – V
I
F
– V
30
10
25
CE
F
3
30
-40
F
100
10 ms*
CE
CE
C res
(V)
1 ms*
100
100 ms*
C oes
C ies
4
(V)
300
(V)
300
50 ms*
1000
1000
5
5
500
400
300
200
100
100
300
100
0.3
0.1
0.3
0.1
30
10
30
10
0
3
1
3
1
0
0
1
Common emitter
R L = 6 W
Tc = 25°C
Common collector
di/dt = -100 A/ms
V GE = 0
T j < = 125°C
V GE = 15 V
R G = 13 W
I rr
t rr
3
Collector-emitter voltage V
: Tc = 25°C
: Tc = 125°C
10
100
300
Forward current I
Gate charge Q
Reverse bias SOA
10
V
V CE = 100 V
CE
200
20
t
rr
, V
, I
200
30
rr
GE
– I
– Q
G
F
30
F
100
G
(nC)
(A)
CE
300
40
300
(V)
GT50J325
1000
400
50
20
16
12
8
4
0
10000
3000
1000
300
100
30
10