GT50J325 Toshiba, GT50J325 Datasheet - Page 3
GT50J325
Manufacturer Part Number
GT50J325
Description
IGBT, 600V, TO-3P(LH)
Manufacturer
Toshiba
Datasheet
1.GT50J325.pdf
(8 pages)
Specifications of GT50J325
Transistor Type
IGBT
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.45V
Power Dissipation Max
240W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Power Dissipation Pd
240W
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT50J325
Manufacturer:
TOHSIBA
Quantity:
9 800
100
100
80
60
40
20
20
16
12
80
60
40
20
0
8
4
0
0
0
0
0
Common emitter
Tc = 25°C
Common emitter
V CE = 5 V
Tc = 125°C
Collector-emitter voltage V
I C = 10 A
Gate-emitter voltage V
25
Gate-emitter voltage V
1
4
4
30
V
2
8
8
I
I
20
CE
C
C
-40
– V
– V
– V
100
50
GE
CE
15
GE
12
12
3
GE
GE
CE
10
Common emitter
Tc = 25°C
(V)
(V)
V GE = 7 V
16
16
4
(V)
8
20
20
5
3
20
16
12
20
16
12
-60
8
4
0
8
4
0
5
4
3
2
1
0
0
0
Common emitter
V GE = 15 V
I C = 10 A
I C = 10 A
-20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
30
30
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
100
100
50
50
– Tc
GE
GE
12
12
60
GE
GE
Common emitter
Tc = -40°C
Common emitter
Tc = 125°C
(V)
(V)
100
16
16
I C = 10 A
GT50J325
100
70
50
30
140
20
20