GT50J325 Toshiba, GT50J325 Datasheet - Page 2
GT50J325
Manufacturer Part Number
GT50J325
Description
IGBT, 600V, TO-3P(LH)
Manufacturer
Toshiba
Datasheet
1.GT50J325.pdf
(8 pages)
Specifications of GT50J325
Transistor Type
IGBT
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.45V
Power Dissipation Max
240W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Power Dissipation Pd
240W
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT50J325
Manufacturer:
TOHSIBA
Quantity:
9 800
Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Switching loss
Peak forward voltage
Reverse recovery time
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
-V
0
0
GE
Characteristics
V
V
I
GE
CE
C
R
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Turn-on switching
loss
Turn-off switching
loss
G
I
C
90%
E
L
off
V
CE
V
CC
(Ta = = = = 25°C)
V
V
Symbol
GE (OFF)
CE (sat)
t
t
I
I
d (on)
d (off)
C
E
E
GES
CES
t
t
V
t
on
off
t
t
ies
on
off
rr
r
f
F
10%
0
0
V
V
I
I
V
Inductive load
V
V
I
I
C
C
F
F
GE
CE
CE
CC
GG
= 50 A, V
= 50 A, di/dt = -100 A/ms
= 5 mA, V
= 50 A, V
V
V
I
E
GE
CE
= ±20 V, V
= 600 V, V
= 10 V, V
= 300 V, I
C
= +15 V, R
on
2
t
GE
GE
10%
d (off)
Test Condition
CE
GE
5%
C
= 0
CE
GE
= 15 V
= 5 V
G
= 50 A
= 0, f = 1 MHz
= 13 W
= 0
= 0
90%
t
off
t
f
90%
10%
(Note 1)
(Note 2)
10%
10%
t
Min
3.5
d (on)
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
7900
Typ.
0.09
0.07
0.24
0.30
0.05
0.43
1.30
1.34
2.0
t
65
t
¾
¾
¾
¾
on
r
90%
GT50J325
±500
2.45
Max
10%
1.0
6.5
4.2
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Unit
mA
mJ
nA
pF
ms
ns
V
V
V