GT25Q102 Toshiba, GT25Q102 Datasheet - Page 5

• Manufacturer Part Number: GT25Q102
• Description: IGBT, 1200V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT25Q102

• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Power Dissipation Pd: 200W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
3000
1000
10
10
10
10
300
100
100
10
10
10
0.5
0.3
0.1
30
10
50
30
10
− 1
− 2
− 3
− 4
0.1
5
3
1
2
1
0
10
1
I C max
(continuous)
− 5
*: Single nonrepetitive
I C max (pulsed)*
Curves must be derated
linearly with increase in
temperature.
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
pulse
Tc = 25°C
0.3
10
3
Collector-emitter voltage V
Collector-emitter voltage V
− 4
operation
1
10
10
Safe operating area
DC
− 3
Pulse width t
3
R
10
C – V
30
th (t)
− 2
10
– t
CE
100
10
100 µs*
w
w
− 1
30
(s)
300
10
CE
CE
1 ms*
100
0
Tc = 25°C
10 ms*
50 µs*
(V)
(V)
1000
10
300
1
C ies
C oes
C res
1000
3000
10
2
5
1000
800
600
400
200
100
0.5
0.3
0.1
50
30
10
0
5
3
1
0
1
Common emitter
R L = 12 Ω
Tc = 25°C
T j < = 125°C
V GE = ±15 V
R G = 43 Ω
3
Collector-emitter voltage V
600
40
V CE = 200 V
Gate charge Q
10
Reverse bias SOA
V
CE
80
30
, V
400
GE
100
– Q
120
G
G
(nC)
300
CE
160
(V)
1000
GT25Q102
2003-03-18
3000
200
20
16
12
8
4
0