GT25Q102 Toshiba, GT25Q102 Datasheet - Page 4

• Manufacturer Part Number: GT25Q102
• Description: IGBT, 1200V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT25Q102

• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Power Dissipation Pd: 200W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.05
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
30
10
3
1
3
1
5
3
1
3
3
3
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 25 A
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 25 A
Note2
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 25 A
5
5
5
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching loss E
Switching time t
Switching time t
: Tc = 25°C
: Tc = 125°C
10
10
10
Gate resistance R
Gate resistance R
Gate resistance R
30
30
30
50
50
50
on
on
off
, E
G
G
G
, t
, t
100
100
100
r
f
off
– R
– R
(Ω)
(Ω)
(Ω)
– R
G
G
G
E on
t off
E off
300
300
300
t r
t on
t f
500
500
500
4
0.05
0.03
0.01
0.05
0.03
0.01
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
1
5
3
1
0
0
0
5
5
5
Switching loss E
Switching time t
Switching time t
Collector current I
Collector current I
Collector current I
10
10
10
15
15
15
on
on
off
C
, E
C
C
, t
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 43 Ω
, t
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 43 Ω
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 43 Ω
Note2
20
20
20
r
f
off
(A)
(A)
(A)
– I
– I
E off
– I
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
C
C
C
25
25
25
GT25Q102
t off
2003-03-18
t on
E on
t r
t f
30
30
30