GT25Q102 Toshiba, GT25Q102 Datasheet - Page 2
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GT25Q102
Manufacturer Part Number
GT25Q102
Description
IGBT, 1200V, TO-3P(LH)
Manufacturer
Toshiba
Datasheet
1.GT25Q102.pdf
(6 pages)
Specifications of GT25Q102
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Max
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Power Dissipation Pd
200W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT25Q102
Manufacturer:
TOHSIBA
Quantity:
9 800
Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Thermal resistance
Note1: Switching time measurement circuit and input/output waveforms
Note2: Switching loss measurement waveforms
−V
0
0
GE
GT25Q301
Characteristic
V
V
I
GE
CE
C
R
G
I
Turn-on time
Turn-off time
C
Rise time
Fall time
90%
E
L
off
V
V
CE
(Ta = = = = 25°C)
CC
V
V
Symbol
GE (OFF)
R
CE (sat)
I
I
C
th (j-c)
GES
CES
t
t
on
off
t
t
ies
r
f
10%
0
0
V
V
I
I
V
Inductive Load
V
V
C
C
GE
CE
CE
CC
GG
= 2.5 mA, V
= 25 A, V
V
V
I
= ±20 V, V
= 1200 V, V
= 50 V, V
= 600 V, I
= ±15 V, R
GE
E
CE
C
on
2
GE
t
Test Condition
10%
d (off)
GE
10%
CE
C
CE
= 15 V
G
GE
= 25 A
= 0, f = 1 MHz
= 5 V
= 43 Ω
= 0
90%
= 0
t
off
t
f
90%
10%
(Note1)
Min
10%
10%
4.0
t
d (on)
1360
Typ.
0.10
0.30
0.16
0.68
2.1
t
t
on
r
90%
GT25Q102
2003-03-18
0.625
±500
0.32
Max
1.0
7.0
2.7
10%
°C/W
Unit
mA
nA
pF
µs
V
V