2MBI450U4N-120-50 FUJI ELECTRIC, 2MBI450U4N-120-50 Datasheet - Page 12

• Manufacturer Part Number: 2MBI450U4N-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 450A, M254
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI450U4N-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 2.08kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.000
0.100
0.010
0.001
1200
1000
800
600
400
200
0.001
0
0
Forward current vs. Forward on voltage (typ.)
Transient thermal resistance (max.)
Forward on voltage : VF [ V ]
Pulse width : Pw [ sec ]
1
0.010
Tj=25
chip
o
C
2
0.100
Tj=125
3
o
C
FWD
IGBT
1.000
4
100.0
10.0
1000
1.0
0.1
100
10
-60 -40 -20 0
0
MS5F6507
Vcc=600V, VGE=±15V, RG=1.1Ω
Reverse recovery characteristics (typ.)
Temperature characteristic (typ.)
200
Forward current : IF [ A ]
20 40 60 80 100 120 140 160 180
Temperature [
[ Thermistor ]
400
o
C ]
600
12
H04-004-03a
Irr(125
Irr(25
trr(125
trr(25
14
o
o
C)
C)
o
o
C)
C)
800
a