2MBI450U4N-120-50 FUJI ELECTRIC, 2MBI450U4N-120-50 Datasheet - Page 11

• Manufacturer Part Number: 2MBI450U4N-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 450A, M254
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI450U4N-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 2.08kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
100
1000
1000
80
60
40
20
100
100
0
10
10
0.1
0.1
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=25
0
Vcc=600V, Ic=450A, VGE=±15V,
Vcc=600V, Ic=450A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
200
Gate resistance : RG [ Ω ]
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
1.0
1.0
ton
400
tf
10.0
10.0
toff
Tj=25
600
ton
toff
tr
Eon
Err
Eoff
tr
tf
o
o
C
C
o
C
100.0
100.0
800
100
1050
10000
80
60
40
20
900
750
600
450
300
150
1000
+VGE=15V, -VGE <= 15V, RG >= 1.1Ω,
0
100
0
10
0
0
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=125
0
MS5F6507
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
150
Vcc=600V, VGE=±15V, RG=1.1Ω
Reverse bias safe operating area (max.)
Stray inductance <= 100nH
Collector-Emitter voltage : VCE [ V ]
400
200
Collector current : Ic [ A ]
300
Collector current : Ic [ A ]
450
800
400
600
Eon(25
1200
Tj <= 125
tr
600
11
H04-004-03a
Eoff(125
Eoff(25
Err(125
Eon(125
Err(25
tf
750
o
C)
o
14
C
ton
toff
o
C
o
o
C)
o
1600
C)
o
C)
o
800
900
C)
C)
a