2MBI450U4N-170-50 FUJI [Fuji Electric], 2MBI450U4N-170-50 Datasheet

2MBI450U4N-170-50

Manufacturer Part Number

2MBI450U4N-170-50

Description

IGBT MODULE

Manufacturer

FUJI [Fuji Electric]

Datasheet

1.2MBI450U4N-170-50.pdf (6 pages)

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2MBI450U4N-170-50

IGBT MODULE (U series)

1700V / 450A / 2 in one package

Note *1: All terminals should be connected together when isolation test will be done.

Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.

Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5)

Note *5: Biggest internal terminal resistance among arm.

Note *6: This is the value which is deﬁned mounting on the additional cooling ﬁn with thermal compound.

Items

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Isolation voltage

Screw torque

Items

Thermal resistance (1device)

Contact thermal resistance (1device) (*6)

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Electrical characteristics (at Tj= 25°C unless otherwise speciﬁed)

Thermal resistance characteristics

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip (*5)

Resistance

B value

between terminal and copper base (*1)

between thermistor and others (*2)

Mounting (*3)

Terminals (*4)

Symbols

(terminal)

(chip)

Cies

ton

tr (i)

toff

(terminal)

(chip)

trr

R lead

Symbols

Rth(j-c)

Rth(c-f)

CES

GES

GE (th)

CE (sat)

Symbols

Icp

-Ic

-Ic pulse

Tstg

Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)

CES

GES

iso

Conditions

T=25°C

T=100°C

T=25/50°C

Conditions

IGBT

FWD

with Thermal Compound

= 450A

= 1.1Ω

= 0V, V

= 20V, I

= 15V

= 10V, V

= 900V

= ±15V

= 0V

Conditions

Continuous

1ms

1 device

AC : 1min.

= ±20V

= 450mA

= 1700V

= 0V, f = 1MHz

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Maximum ratings

3305

min.

465

4.5

-40 to +125

Characteristics

1700

1200

2080

3400

±20

600

450

900

450

900

150

3.5

4.5

0.0167

5000

3375

2.65

2.00

2.80

3.20

2.25

0.62

0.39

0.05

0.55

0.09

2.25

2.45

1.80

0.18

1.00

typ.

495

6.5

IGBT Modules

max.

3450

3.05

2.45

1.20

0.60

1.50

0.30

2.55

1.95

0.06

0.10

600

520

3.0

8.5

0.6

Units

VAC

N m

°C

Units

°C/W

mΩ

µs

Ω

Related parts for 2MBI450U4N-170-50

2MBI450U4N-170-50 Summary of contents

Page 1

... IGBT MODULE (U series) 1700V / 450A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25° ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1200 1000 VGE=20V 15V 800 600 400 200 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1200 1000 Tj=25°C 800 600 400 200 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25° ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj= 25°C 10000 1000 100 10 0 200 400 Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=450A, VGE=±15V, Tj= 25°C 10000 1000 ton toff tr 100 tf 10 0.1 1.0 Gate resistance : RG [Ω] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=450A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) chip 1200 1000 Tj=25°C 800 600 400 200 Forward on voltage : VF [V] Transient thermal resistance　(max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [sec] 1000 Tj=125° 100 FWD IGBT 0.100 1 ...

Page 5

... Outline Drawings, mm Equivalent Circuit Schematic OUT (3, ( IGBT Modules T1 [ Thermistor ] T2 ...

Page 6

... This Catalog contains the product speciﬁcations, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for speciﬁcation changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest speciﬁcations. ...

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