FP50R06W2E3 Infineon Technologies, FP50R06W2E3 Datasheet - Page 6

• Manufacturer Part Number: FP50R06W2E3
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP50R06W2E3

• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 175W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.45V
• Rohs Compliant: Yes
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.45 V
• Configuration: PIM Three Phase Input Rectifier
• Technology: IGBT3
• Housing: EasyPIM™ 2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Der Strom im Dauerbetrieb ist auf 30A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 30A rms per connector pin.
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