FP50R06W2E3 Infineon Technologies, FP50R06W2E3 Datasheet - Page 10

• Manufacturer Part Number: FP50R06W2E3
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP50R06W2E3

• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 175W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.45V
• Rohs Compliant: Yes
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.45 V
• Configuration: PIM Three Phase Input Rectifier
• Technology: IGBT3
• Housing: EasyPIM™ 2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
5
5
1, / $(,-'
1, / $(,-'
(W- / & (
(W- / & (
?8F 8
?8F 8
?8F
?8F
L / $8'
L / $8'
5
5
1, / $(,-'
1, / $(,-'
(W- / & (
(W- / & (
?8F 8
?8F 8
?8F
?8F
L / $8'
L / $8'
100000
10000
1000
*
*
*
*
100
100
90
80
70
60
50
40
30
20
10
0
0,0
* =
* =
* =
* =
9
9
9
9
0
20
8QR / &SF
8QR /
8QR / & SF
LDƒq
0,5
=
=
=
=
9
9
9
9
1A 8
1A 8
1A 8
1A 8
40
1A 8
1A 8
1A 8
1A 8
&SF
1,0
60
$
$
$
$
(,- w(y
8, wSFy
=
=
=
=
1,5
80
$
$
$
$
F9
F9
F9
F9
9'
9'
9'
9'
9
9
9
9
FP50R06W2E3
100 120 140 160
2,0
'
'
'
'
$
$
$
$
$
$
$
$
2,5
9'
9'
9'
9'
'
'
'
'
3,0
10
1m / $(m'
1m / $(m'
1m / $(m'
1m / $(m'
:
:
:
:
9
9
9
9
30
27
24
21
18
15
12
9
6
3
0
0,0
9
9
9
9
=
=
=
=
0,3
8QR / &SF
8QR /
8QR / & SF
0,6
&SF
0,9
(m w(y
1,2
Vorläufige Daten
preliminary data
=
=
=
=
1,5
F9
F9
F9
F9
9
9
9
9
1,8
$
$
$
$
$
$
$
$
2,1
9'
9'
9'
9'
'
'
'
'
2,4