FF900R12IP4D Infineon Technologies, FF900R12IP4D Datasheet - Page 7

• Manufacturer Part Number: FF900R12IP4D
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF900R12IP4D

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 5.1kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.7V
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Ic (max): 900.0 A
• Vce(sat) (typ): 1.7 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
&_^p 0 %1n'
&_^p 0 %1n'
NW32 0
NW32 0
7
7
‚IYi- 0 % '
‚IYi- 0 % '
&_^p 0 %1n'
&_^p 0 %1n'
NW32 0
NW32 0
7
7
‚IYi- 0 % '
‚IYi- 0 % '
9
9
9
9
8
8
8
8
240
200
160
120
100
0,1
8 *
8 *
8 *
8 *
80
40
10
0
1
0,001
0
]F (-. 0 R
]F (-. 0 R
]F (-. 0 R
]F (-. 0 R
8
8
8
8
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L)
L)
L)
400
+
+
+
+
&_^pF 7<= 0
&_^pF 7<= 0 " T
‚IYi- +
+
+
+
+
0,01
9
9
9
9
800
(
(
(
(
8
8
8
8
8
8
8
8
"T
1200 1600 2000 2400 2800
\wD,:Ly
\w y
+
+
+
+
1n w y
+
+
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+
0,1
w y
DF1400R12IP4D
F
8
8
8
8
8
8
8
8
R
F
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1
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RF"
F "
F"
FR
10
7
&_^p 0 %NW'
&_^p 0 %NW'
&_^p 0 %NW'
&_^p 0 %NW'
1n 0
1n 0
1n 0
1n 0
Q7
Q7
Q7
Q7
Q7
Q7
Q7
Q7
N 0 %7'
N 0 %7'
N 0 %7'
N 0 %7'
9
9
100000
9
9
10000
8
8
8
8
1000
200
180
160
140
120
100
100
8 *
8 *
8 *
8 *
80
60
40
20
7
7
7
7
0
0
0
F (-. 0 R
F (-. 0 R
F (-. 0 R
F (-. 0 R
20
+
+
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+
&_^pF 7<= 0
&_^pF 7<= 0 " T
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8
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60
"T
%
%
%
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4
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NW w]y
80
%
%
%
%
Vorläufige Daten
preliminary data
8'
8'
8'
8'
6
100 120 140 160
'
'
'
'
8
10