BLF571 NXP Semiconductors, BLF571 Datasheet - Page 7

• Manufacturer Part Number: BLF571
• Description: LDMOS,RF,20W,HF-500MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF571

• Drain Source Voltage Vds: 110V
• Continuous Drain Current Id: 3.6A
• Operating Frequency Range: 430MHz To 520MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF571_2
Product data sheet
Fig 7.
(dB)
G
p
30
28
26
24
22
0
V
f
Power gain and drain efficiency as function of
peak envelope load power; typical values
2
DS
= 225.05 MHz.
= 50 V; I
8.1.2 2-Tone CW
G
D
p
Dq
10
= 50 mA; f
Fig 6.
(1) P
(2) P
1
= 224.95 MHz;
V
Load power as function of input power; typical values
20
DS
L(1dB)
L(3dB)
= 50 V; I
P
L(PEP)
= 43.3 dBm (21.4 W)
= 44 dBm (25.1 W)
001aaj177
(W)
Dq
(dBm)
Rev. 02 — 24 February 2009
P
= 50 mA; f = 225 MHz.
30
L
50
48
46
44
42
40
80
60
40
20
0
13
(%)
D
15
Fig 8.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
20
40
60
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
Dq
(1)
17
DS
= 20 mA
= 40 mA
= 50 mA
= 60 mA
= 80 mA
= 50 V; f
ideal P
P
L
L
HF / VHF power LDMOS transistor
19
1
10
= 224.95 MHz; f
P
i
001aaj176
(2)
(dBm)
21
(1)
(2)
(3)
(4)
(5)
20
2
= 225.05 MHz.
P
L(PEP)
© NXP B.V. 2009. All rights reserved.
BLF571
001aaj178
(W)
30
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