BLF571 NXP Semiconductors, BLF571 Datasheet

LDMOS,RF,20W,HF-500MHZ,50V

BLF571

Manufacturer Part Number
BLF571
Description
LDMOS,RF,20W,HF-500MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF571

Drain Source Voltage Vds
110V
Continuous Drain Current Id
3.6A
Operating Frequency Range
430MHz To 520MHz
Rf Transistor Case
SOT-467C
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the
HF and VHF band.
Table 1.
I
I
I
I
I
I
I
I
I
I
Mode of operation
CW
BLF571
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I
of 50 mA:
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 20 W
Power gain = 27.5 dB
Efficiency = 70 %
Production test performance
f
(MHz)
225
V
(V)
50
DS
P
(W)
20
L
Product data sheet
G
(dB)
27.5
p
(%)
70
D
Dq

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BLF571 Summary of contents

Page 1

... BLF571 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 1. Product profile 1.1 General description LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Mode of operation CW CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... LDMOST ceramic package; 2 mounting holes; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 02 — 24 February 2009 BLF571 HF / VHF power LDMOS transistor Simplified outline Graphic symbol 1 [ Min - 0 ...

Page 3

... HF / VHF power LDMOS transistor Min = 0.25 mA 110 1. 1. 3.75 V; 3.0 GS GS( GS(th) = 833 mA Min Typ = 20 W 25.5 27 BLF571 Typ Max Unit - - V 1.7 2.25 V 1.75 2. 1 140 nA 1 1. case Max Unit 29 © NXP B.V. 2009. All rights reserved ...

Page 4

... NXP Semiconductors Fig 1. 6.1 Ruggedness in class-AB operation The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 225 MHz. 7. Application information 7.1 Impedance information Table 8. Simulated Z f MHz 225 Fig 2. BLF571_2 Product data sheet 50 C oss ...

Page 5

... TTF (0.1 % failure fraction). = 100 110 120 130 140 150 160 170 180 190 200 C j BLF571 electromigration Rev. 02 — 24 February 2009 BLF571 HF / VHF power LDMOS transistor 001aaj173 0.8 1.2 I (A) DS(DC) © NXP B.V. 2009. All rights reserved. 1 ...

Page 6

... BLF571_2 Product data sheet 001aaj174 (%) (dB (W) L (1) I (2) I (3) I (4) I (5) I Fig 5. Rev. 02 — 24 February 2009 BLF571 HF / VHF power LDMOS transistor 001aaj175 (5) (4) (3) (2) ( 225 MHz Power gain as a function of load power; typical values © NXP B.V. 2009. All rights reserved. ...

Page 7

... Fig 8. Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor 001aaj176 ideal (dBm (1) 40 (2) (3) (4) ( L(PEP 224.95 MHz 225.05 MHz Third order intermodulation distortion as a function of peak envelope load power; typical values © NXP B.V. 2009. All rights reserved. BLF571 001aaj178 30 ( ...

Page 8

... W = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); r Rev. 02 — 24 February 2009 BLF571 HF / VHF power LDMOS transistor 10. W) 16 3 43 3 8 3 27 28.5 mm 2.4 mm © NXP B.V. 2009. All rights reserved. ...

Page 9

... Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor L16 L4 L17 L19 L5 L20 L18 C10 C12 C11 L5 L4 C12 C13 6 NXP BLF571 225 MHz OUTPUT PCB REV2 BLF571 output 50 C14 L21 C13 001aaj179 C14 001aaj180 © NXP B.V. 2009. All rights reserved ...

Page 10

... Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor 2.21 20.45 5.97 14.27 0.25 0.51 1.96 20.19 5.72 0.087 0.805 0.235 0.562 0.010 0.020 0.077 0.795 0.225 EUROPEAN PROJECTION BLF571 SOT467C E ISSUE DATE 99-12-06 99-12-28 © NXP B.V. 2009. All rights reserved ...

Page 11

... Release date Data sheet status 20090224 Product data sheet • Data sheet status updated from Preliminary to Product 20081211 Preliminary data sheet Rev. 02 — 24 February 2009 BLF571 HF / VHF power LDMOS transistor Change notice Supersedes - BLF571_1 - - © NXP B.V. 2009. All rights reserved ...

Page 12

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 24 February 2009 BLF571 HF / VHF power LDMOS transistor © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF571 All rights reserved. Date of release: 24 February 2009 Document identifier: BLF571_2 ...

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