BLA6H1011-600 NXP Semiconductors, BLA6H1011-600 Datasheet - Page 6

• Manufacturer Part Number: BLA6H1011-600
• Description: LDOMS,RF,600W,1030M-1090MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLA6H1011-600

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 72A
• Operating Frequency Range: 960MHz To 1.215GHz / 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-539A
• No. Of Pi: RoHS Compliant
• Transistor Type: RF MOSFET

NXP Semiconductors
BLA6H1011-600_1
Product data sheet
Fig 9.
(dB)
G
(1) T
(2) T
(3) T
p
21
19
17
15
13
11
0
f = 1030 MHz; I
Power gain as a function of load power;
typical values
h
h
h
= −40 °C
= +25 °C
= +65 °C
7.3 Curves measured under Mode-S ELM pulse-conditions
200
Dq
Fig 8.
= 100 mA.
400
(1) f = 1030 MHz
(2) f = 1090 MHz
T
Load power as a function of input power; typical values
h
= 65 °C; V
600
All information provided in this document is subject to legal disclaimers.
P
001aal839
L
(W)
(1)
(2)
(3)
DS
(W)
P
800
= 48 V; I
800
600
400
200
L
Rev. 01 — 22 April 2010
0
0
Dq
= 100 mA; t
4
Fig 10. Drain efficiency as a function of load power;
(%)
η
(1) T
(2) T
D
8
80
60
40
20
p
0
= 50 μs; δ = 2 %.
0
f = 1030 MHz; I
typical values
h
h
= 25 °C
= 65 °C
12
200
LDMOS avionics power transistor
16
(1)
Dq
BLA6H1011-600
001aal838
P
= 100 mA.
i
(W)
400
(2)
20
600
© NXP B.V. 2010. All rights reserved.
P
001aal840
L
(W)
(1)
(2)
800
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