BAW56 T/R NXP Semiconductors, BAW56 T/R Datasheet - Page 6

• Manufacturer Part Number: BAW56 T/R
• Description: SWITCHING DIODE, 90V, 215mA, SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAW56 T/R

• Diode Type: Small Signal
• Forward Current If(av): 215mA
• Repetitive Reverse Voltage Vrrm Max: 90V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BAV756S_BAW56_SER_5
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of reverse
(mA)
(1) T
(2) T
(3) T
(4) T
( A)
(1) T
(2) T
(3) T
(4) T
I
I
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
voltage; typical values
voltage; typical values
0.2
0
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
(1)
20
(2)
0.6
(1)
(2)
(3)
(4)
(3)
40
(4)
60
1.0
V
80
F
006aab109
006aab110
(V)
V
R
(V)
Rev. 05 — 26 November 2007
100
1.4
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
BAV756S; BAW56 series
I
FSM
(A)
(pF)
10
C
10
2.5
2.0
1.5
1.0
0.5
d
10
1
0
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
0
1
j
= 25 C; prior to surge
5
10
amb
= 25 C
10
High-speed switching diodes
10
2
15
10
© NXP B.V. 2007. All rights reserved.
3
20
t
p
V
( s)
mbg704
mbh191
R
(V)
10
25
4
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