BAW56 T/R NXP Semiconductors, BAW56 T/R Datasheet - Page 5

SWITCHING DIODE, 90V, 215mA, SOT-23

BAW56 T/R

Manufacturer Part Number
BAW56 T/R
Description
SWITCHING DIODE, 90V, 215mA, SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAW56 T/R

Diode Type
Small Signal
Forward Current If(av)
215mA
Repetitive Reverse Voltage Vrrm Max
90V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
7. Characteristics
BAV756S_BAW56_SER_5
Product data sheet
Table 7.
[1]
[2]
Table 8.
T
[1]
[2]
[3]
Symbol
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to solder point
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
p
BAV756S
BAW56
BAW56S
BAW56T
BAW56W
300 s;
Rev. 05 — 26 November 2007
F
F
= 10 mA to I
= 10 mA; t
0.02.
r
= 20 ns.
R
= 10 mA; R
…continued
BAV756S; BAW56 series
Conditions
I
I
I
I
V
V
V
V
V
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
= 0 V; f = 1 MHz
Conditions
L
= 100 ; measured at I
j
j
= 150 C
= 150 C
High-speed switching diodes
[1]
[2]
[3]
Min
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
255
360
255
350
300
Max
715
855
1
1.25
30
0.5
30
150
2
4
1.75
Unit
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
V
V
nA
pF
ns
V
5 of 15
A
A
A

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