BAT54S.215 NXP Semiconductors, BAT54S.215 Datasheet - Page 4

• Manufacturer Part Number: BAT54S.215
• Description: DIODE, SCHOTTKY, REEL 3K
• Manufacturer: NXP Semiconductors

Specifications of BAT54S.215

• Diode Type: Schottky
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Voltage Vf Max: 800mV
• Reverse Recovery Time Trr Max: 5ns
• Forward Surge Current Ifsm Max: 600mA
• Operating: RoHS Compliant

handbook, halfpage
Philips Semiconductors
2002 Mar 04
handbook, halfpage
Schottky barrier (double) diodes
(mA)
(1) T
(2) T
(3) T
Fig.3
f = 1 MHz; T
Fig.5
I F
10
(pF)
C d
10
10
10
15
10
1
0
5
amb
amb
amb
3
2
1
0
0
(1)
= 125 C.
= 85 C.
= 25 C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 C.
(3)
10
0.4
(1)
(2)
20
0.8
(3)
V R (V)
V F (V)
MSA891
MSA892
30
1.2
4
handbook, halfpage
I F
I R
(1) T
(2) T
(3) T
Fig.4
( A)
I R
10
10
10
10
amb
amb
amb
1
3
2
1
0
= 125 C.
= 85 C.
= 25 C.
Reverse current as a function of reverse
voltage; typical values.
Fig.6 Reverse recovery definitions.
dI
dt
F
Q
r
10
t f
BAT54 series
20
Product specification
V
R
(1)
(2)
(3)
(V)
MSA893
MRC129 - 1
10%
90%
30
t