BAT54S.215 NXP Semiconductors, BAT54S.215 Datasheet - Page 3

• Manufacturer Part Number: BAT54S.215
• Description: DIODE, SCHOTTKY, REEL 3K
• Manufacturer: NXP Semiconductors

Specifications of BAT54S.215

• Diode Type: Schottky
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Voltage Vf Max: 800mV
• Reverse Recovery Time Trr Max: 5ns
• Forward Surge Current Ifsm Max: 600mA
• Operating: RoHS Compliant

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
2002 Mar 04
Per diode
V
I
I
I
T
T
Per device
P
R
Per diode
V
I
t
C
F
FRM
FSM
amb
R
rr
SYMBOL
SYMBOL
SYMBOL
stg
j
R
tot
F
th j-a
d
Schottky barrier (double) diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
total power dissipation
thermal resistance from junction to
ambient
forward voltage
reverse current
reverse recovery time
diode capacitance
PARAMETER
PARAMETER
PARAMETER
t
t
T
note 1
see Fig.3
V
when switched from I
to I
measured at I
see Fig.6
f = 1 MHz; V
3
p
p
amb
R
< 10 ms
I
I
I
I
I
F
F
F
F
F
R
= 25 V; see Fig.4
1 s;
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 10 mA; R
25 C
CONDITIONS
CONDITIONS
CONDITIONS
0.5
R
R
= 1 V; see Fig.5
= 1 mA;
L
= 100 ;
F
= 10 mA
240
320
400
500
800
2
5
10
MIN.
65
VALUE
MAX.
BAT54 series
500
Product specification
30
200
300
600
+150
125
230
MAX.
mV
mV
mV
mV
mV
ns
pF
A
UNIT
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT