BAS16 NXP Semiconductors, BAS16 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BAS16
Manufacturer Part Number
BAS16
Description
DIODE, SWITCHING, SOT-23, 85V, 215MA
Manufacturer
NXP Semiconductors
Datasheet
1.BAS16.pdf
(12 pages)
Specifications of BAS16
Diode Type
Small Signal
Forward Current If(av)
215mA
Repetitive Reverse Voltage Vrrm Max
85V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS16
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAS16 E6327
Manufacturer:
INFINEON
Quantity:
27 562
Part Number:
BAS16 H6327
Manufacturer:
INFIENON
Quantity:
20 000
Company:
Part Number:
BAS16 T/R
Manufacturer:
DEC
Quantity:
2 849
Part Number:
BAS16,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BAS16-02 E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BAS16-02V-E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Philips Semiconductors
2001 Oct 10
High-speed diode
(nA)
I R
10
10
10
10
10
Fig.5
5
4
3
2
0
max
typ
Reverse current as a function of
junction temperature.
V
R
typ
= 75 V
75 V
25 V
100
T ( C)
j
o
MGA884
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
0.8
0.6
0.4
0.2
0
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 C.
4
8
Product specification
12
V R (V)
MBG446
BAS16
16