BAS16 NXP Semiconductors, BAS16 Datasheet - Page 2

• Manufacturer Part Number: BAS16
• Description: DIODE, SWITCHING, SOT-23, 85V, 215MA
• Manufacturer: NXP Semiconductors

Specifications of BAS16

• Diode Type: Small Signal
• Forward Current If(av): 215mA
• Repetitive Reverse Voltage Vrrm Max: 85V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BAS16 is a high-speed switching diode fabricated in
planar technology, and encapsulated in a small SOT23
plastic SMD package.
MARKING
Note
1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2001 Oct 10
BAS16
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
High-speed switching in hybrid thick and thin-film
circuits.
RRM
R
tot
High-speed diode
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
TYPE NUMBER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
A6
MARKING CODE
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
(1)
amb
t = 1 s
t = 1 ms
t = 1 s
= 25 C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
j
= 25 C prior to
Fig.1 Simplified outline (SOT23) and symbol.
PIN
1
2
3
2
3
anode
not connected
cathode
1
65
MIN.
DESCRIPTION
n.c.
Product specification
2
85
75
215
500
4
1
0.5
250
+150
150
MAX.
BAS16
3
V
V
mA
mA
A
A
A
mW
C
C
MAM185
UNIT
1