1N4448 NXP Semiconductors, 1N4448 Datasheet - Page 5
![DIODE, HIGH SPEED, DO-35](/photos/22/10/221012/ge2do3507-40_sml.jpg)
1N4448
Manufacturer Part Number
1N4448
Description
DIODE, HIGH SPEED, DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.1N4148113.pdf
(9 pages)
Specifications of 1N4448
Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
75V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
500mA
Operating
RoHS Compliant
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NXP Semiconductors
2004 Aug 10
High-speed diodes
(1) V
(2) V
Fig.5
(µA)
I
R
10 −
10 −
10
10
10
1
R
R
3
2
1
2
0
= 75 V; typical values.
= 20 V; typical values.
Reverse current as a function of junction
temperature.
100
(1)
T
j
(°C)
(2)
mgd290
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.2
1.0
0.8
0.6
0.4
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
1N4148; 1N4448
10
V R (V)
Product data sheet
MGD004
20