1N4448 NXP Semiconductors, 1N4448 Datasheet - Page 3
1N4448
Manufacturer Part Number
1N4448
Description
DIODE, HIGH SPEED, DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.1N4148113.pdf
(9 pages)
Specifications of 1N4448
Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
75V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
500mA
Operating
RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N4448
Manufacturer:
Vishay
Quantity:
20 000
Part Number:
1N4448
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
1N4448 TR
Manufacturer:
NSC
Quantity:
43 283
Company:
Part Number:
1N4448-TR
Manufacturer:
VSS
Quantity:
400
Part Number:
1N4448HLP-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
1N4448HWS-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
1N4448HWT-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
1N4448TR
Manufacturer:
NSC
Quantity:
43 283
Part Number:
1N4448TR
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
2004 Aug 10
V
V
I
I
I
P
T
T
V
I
I
C
t
V
R
R
SYMBOL
SYMBOL
SYMBOL
j
F
FRM
FSM
R
R
rr
stg
j
RRM
R
tot
= 25 °C unless otherwise specified.
F
fr
High-speed diodes
d
th(j-tp)
th(j-a)
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
forward voltage
reverse current
reverse current; 1N4448
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
1N4148
1N4448
PARAMETER
PARAMETER
PARAMETER
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
see Fig.3
V
V
V
f = 1 MHz; V
when switched from I
I
measured at I
when switched from I
t
amb
R
r
t = 1 µs
t = 1 ms
t = 1 s
R
R
R
= 20 ns; see Fig.8
I
I
I
= 60 mA; R
F
F
F
= 20 V; see Fig.5
= 20 V; T
= 20 V; T
= 25 °C; note 1
= 10 mA
= 5 mA
= 100 mA
lead length 10 mm
lead length 10 mm; note 1
3
CONDITIONS
CONDITIONS
j
j
R
= 150 °C; see Fig.5
= 100 °C; see Fig.5
L
R
j
= 0 V; see Fig.6
= 25 °C prior to
= 100 Ω;
= 1 mA; see Fig.7
CONDITIONS
F
F
= 10 mA to
= 50 mA;
−
−
−
−
−
−
−
−
−65
−
−
0.62
−
−
−
−
−
−
MIN.
MIN.
1N4148; 1N4448
100
100
200
450
4
1
0.5
500
+200
200
1
0.72
1
25
50
3
4
4
2.5
240
350
VALUE
Product data sheet
MAX.
MAX.
V
V
mA
mA
A
A
A
mW
°C
°C
V
V
V
nA
µA
µA
pF
ns
V
K/W
K/W
UNIT
UNIT
UNIT