MBR20H150CT Taiwan Semiconductor, MBR20H150CT Datasheet - Page 2

• Manufacturer Part Number: MBR20H150CT
• Description: DIODE, SCHOTTKY, 20A, 150V
• Manufacturer: Taiwan Semiconductor

Specifications of MBR20H150CT

• Repetitive Reverse Voltage Vrrm Max: 150V
• Forward Current If(av): 20A
• Forward Voltage Vf Max: 970mV
• Forward Surge Current Ifsm Max: 150A
• Diode Configuration: Dual Common Cathode
• Diode Type: Schottky
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2,000
1,000
5,000
0.01
500
200
100
10
0.1
40
16
12
20
8
0
1
4
FIG.3- TYPICAL INSTANTANEOUS FORWARD
0.1
0
0
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
RATINGS AND CHARACTERISTIC CURVES (MBR20H100CT - MBR20H200CT)
RESISTIVE OR
INDUCTIVE LOAD
0.1
25
CHARACTERISTICS PER LEG
0.2
0.3
FORWARD VOLTAGE. (V)
50
Tj=125 C
0.4
CASE TEMPERATURE. ( C)
1.0
REVERSE VOLTAGE. (V)
0.5
0
75
0.6
0.7
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
100
0.8
0
0.9
125
10
o
1.0 1.1
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
150
1.2
0
175
100
0.0001
0.001
10.0
150
125
100
100
0.01
75
50
25
0.1
0.1
1
5
1
0
1
0.01
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
FIG.4- TYPICAL REVERSE CHARACTERISTICS
0
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
20
SURGE CURRENT PER LEG
PER LEG
PER LEG
40
0.1
NUMBER OF CYCLES AT 60Hz
Tj=125 C
T, PULSE DURATION. (sec)
60
0
Tj=75 C
80
0
10
1
100
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
Tj=25 C
120
0
Version: A07
10
140
100
100