MBR20H150CT Taiwan Semiconductor, MBR20H150CT Datasheet
MBR20H150CT
Manufacturer Part Number
MBR20H150CT
Description
DIODE, SCHOTTKY, 20A, 150V
Manufacturer
Taiwan Semiconductor
Datasheet
1.MBR20H150CT.pdf
(2 pages)
Specifications of MBR20H150CT
Repetitive Reverse Voltage Vrrm Max
150V
Forward Current If(av)
20A
Forward Voltage Vf Max
970mV
Forward Surge Current Ifsm Max
150A
Diode Configuration
Dual Common Cathode
Diode Type
Schottky
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR20H150CT
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBR20H150CT
Manufacturer:
深爱/SI
Quantity:
20 000
Company:
Part Number:
MBR20H150CT-E3/45
Manufacturer:
Vishay/General Semiconductor
Quantity:
1 915
Part Number:
MBR20H150CT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR20H150CTG
Manufacturer:
ON Semiconductor
Quantity:
500
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125
Peak Repetitive Forward Current (Rated V
Square Wave, 20KHz) at Tc=125
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
Maximum Instantaneous Reverse Current
@ Tc =25
@ Tc=125
Voltage Rate of Change (Rated V
Maximum Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
Type Number
Pb
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in power supply – output rectification, power
management, instrumentation
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
o
O
o
C/10 seconds,0.25”(6.35mm)from case
o
C at Rated DC Blocking Voltage
C
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
RoHS
RoHS
COMPLIANCE
COMPLIANCE
Al-Plate.
o
C ambient temperature unless otherwise specified.
(Note 2)
I
I
I
I
F
F
F
F
=10A, T
=20A, T
=20A, T
=10A, T
o
R
C
)
C
C
C
C
=125
=25
=125
=25
MBR20H100CT – MBR20H200CT
o
R
o
C
,
C
o
o
C
C
20.0 AMPS. Schottky Barrier Rectifiers
Symbol
dV/dt
R
V
V
T
I
I
I
V
I
RRM
(AV)
FRM
FSM
V
T
RRM
RMS
θJC
I
STG
DC
R
F
J
20H100CT
Dimensions in inches and (millimeters)
MBR
0.85
0.75
0.95
0.85
100
100
70
TO-220AB
1.0
20H150CT
-65 to +175
-65 to +175
10,000
MBR
150
105
150
150
2.0
1.5
20
20
5
Version: A07
0.88
0.75
0.97
0.85
20H200CT
MBR
200
140
200
0.5
Units
o
V/uS
C/W
mA
uA
o
o
V
V
V
A
A
A
A
V
C
C
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MBR20H150CT Summary of contents
Page 1
RoHS RoHS Pb COMPLIANCE COMPLIANCE Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in power supply ...
Page 2
RATINGS AND CHARACTERISTIC CURVES (MBR20H100CT - MBR20H200CT) FIG.1- FORWARD CURRENT DERATING CURVE 20 RESISTIVE OR INDUCTIVE LOAD 100 75 125 o CASE TEMPERATURE FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG ...