MMBZ15VDL NXP Semiconductors, MMBZ15VDL Datasheet - Page 5

• Manufacturer Part Number: MMBZ15VDL
• Description: DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VDL

• Reverse Stand-off Voltage Vrwm: 12.8V
• Breakdown Voltage Range: 14.3V To 15.8V
• Clamping Voltage Vc Max: 21.2V
• Diode Configuration: Common Cathode
• Peak Pulse Current Ippm: 1.9A
• Diode Case: RoHS Compliant

NXP Semiconductors
6. Thermal characteristics
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Fig 1.
(%)
I
PP
150
100
50
0
0
10/1000 s pulse waveform according to
IEC 61643-321
100 % I
1.0
PP
Table 8.
Table 9.
[1]
[2]
[3]
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Symbol
Per device
R
R
; 10 s
50 % I
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point at pin 3.
2.0
PP
; 1000 s
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
ESD standards compliance
Thermal characteristics
3.0
Double ESD protection diodes for transient overvoltage suppression
t
006aab319
p
(ms)
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
4.0
Fig 2.
100 %
10 %
Conditions
in free air
90 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
t
r
30 ns
0.7 ns to 1 ns
60 ns
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
© NXP B.V. 2008. All rights reserved.
001aaa631
Max
350
280
60
t
2
.
Unit
K/W
K/W
K/W
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