MMBZ15VDL NXP Semiconductors, MMBZ15VDL Datasheet - Page 2

• Manufacturer Part Number: MMBZ15VDL
• Description: DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VDL

• Reverse Stand-off Voltage Vrwm: 12.8V
• Breakdown Voltage Range: 14.3V To 15.8V
• Clamping Voltage Vc Max: 21.2V
• Diode Configuration: Common Cathode
• Peak Pulse Current Ippm: 1.9A
• Diode Case: RoHS Compliant

NXP Semiconductors
2. Pinning information
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
1.4 Quick reference data
Table 2.
T
Table 3.
Symbol
Per diode
V
C
Pin
1
2
3
amb
RWM
d
= 25 C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Description
anode (diode 1)
anode (diode 2)
common cathode
Quick reference data
Pinning
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
Conditions
f = 1 MHz; V
Simplified outline
R
1
= 0 V
3
Min
-
-
-
-
-
-
-
-
-
-
-
-
2
Typ
-
-
-
-
-
-
110
85
70
65
48
45
Graphic symbol
© NXP B.V. 2008. All rights reserved.
1
Max
8.5
12.8
14.5
17
22
26
140
105
90
80
60
55
3
006aaa150
2
Unit
V
V
V
V
V
V
pF
pF
pF
pF
pF
pF
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