C500TS502 Omron, C500TS502 Datasheet - Page 31

• Manufacturer Part Number: C500TS502
• Description: RTD INPUT MODULE
• Manufacturer: Omron

Specifications of C500TS502

• Leaded Process Compatible: No
• Peak Reflow Compatible (260 C): No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Module Internal Processing
4- -3- -7
4- -4
Module Internal Processing
EEPROM Functions
Note: The module will refuse additional EEPROM write cycles after 5000 until the
Note: The EEPROM has a life of 10000 write cycles. When writing to the EEPROM,
The module has an internal EEPROM memory which stores the module
memory map. When power is applied, the module uploads the EEPROM to
RAM and begins execution using the RAM values in the module memory
map. The EEPROM write function allows the user to store new default mod-
ule memory map values that will be uploaded on the next power up of the
module.
To store the current module memory map into EEPROM, do the following:
1.
2.
3.
release code, 4F43, is written to the module with a 1-word I/O write com-
mand.
use caution to avoid continuous write operations by executing the ladder log-
ic only one time or updating the location manually using data memory. The
module will require a replacement EEPROM at 10000 write cycles.
The module has an internal processor that controls the A/D conversion and
performs the intelligent functions. Steps 1, 2, and 3 describe the internal pro-
cessing of the module.
1.
2.
3.
80
81
82
Module memory map
Read module memory map location 80.
Set module memory map location 82 equal to location 80.
Set bit 03 of the module I/O word n to 1. On the rising edge, the module
will write the module memory map to the EEPROM. The module will
then increment location 80 by 1. Location 82 must be updated with the
new value to enable another another write cycle to take place.
When power is applied; the module initializes RAM, performs all internal
diagnostics, and uploads the default module memory map from
EEPROM.
The module scans all 8 input points and performs a conversion internal-
ly every 15 ms. Module update time can be up to 40 ms with special
functions enabled.
The execution of the I/O read and write ladder instructions do not inter-
rupt the module scan. The module and programmable controller transfer
information to and from the module memory map (RAM) in the module.
location
EEPROM total write
cycle count
EEPROM error flags
EEPROM compare word
Description
0000 to 9999
0 or 1
0000 to 9999
Valid data
Section 4- -4
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