MCP1403-E/MF Microchip Technology, MCP1403-E/MF Datasheet - Page 10

• Manufacturer Part Number: MCP1403-E/MF
• Description: IC,Dual MOSFET Driver,CMOS,LLCC,8PIN,PLASTIC
• Manufacturer: Microchip Technology
• Type: Low Sider

Specifications of MCP1403-E/MF

• Configuration: Low-Side
• Input Type: Inverting
• Delay Time: 40ns
• Current - Peak: 4.5A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-DFN
• Rise Time: 28 ns
• Fall Time: 28 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 2 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP1403/4/5
4.0
4.1
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching
power supplies, the PWM controller may not have the
drive capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1403/4/5 family can be
used
capability.
4.2
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the driv-
ers rise time (t
(t
typically charge and discharge a 2200 pF load capaci-
tance in 15 ns along with a typical matched propaga-
tion delay of 40 ns.
test circuit and timing waveform used to verify the
MCP1403/4/5 timing.
FIGURE 4-1:
Waveform.
DS22022B-page 10
D1
Output
Input
and t
+5V
18V
0V
0V
Input
to
Input
APPLICATION INFORMATION
General Information
MOSFET Driver Timing
D2
10%
provide
). The MCP1403/4/5 family of drivers can
R
), fall time (t
90%
(1/2 MCP1405)
V
t
MCP1403
Figure 4-1
D1
10%
DD
additional
= 18V
Inverting Driver Timing
t
F
F
1 µF
), and propagation delays
and
source/sink
Figure 4-2
C
L
t
Output
D2
0.1 µF
Ceramic
= 2200 pF
90%
t
10%
R
show the
current
90%
FIGURE 4-2:
Waveform.
4.3
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.5A are needed
to charge a 2200 pF load with 18V in 16 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance a ceramic and low
ESR film capacitor are recommended to be placed in
parallel between the driver V
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between
These capacitors should be placed close to the driver
to minimized circuit board parasitics and provide a local
source for the required current.
4.4
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
Output
Input
+5V
18V
0V
0V
Input
Input
Decoupling Capacitors
PCB Layout Considerations
10%
V
(1/2 MCP1405)
t
DD
D1
V
MCP1404
DD
90%
and GND pins
= 18V
Non-Inverting Driver Timing
© 2007 Microchip Technology Inc.
10%
1 µF
DD
t
R
and GND. A 1.0 µF low
C
L
Output
= 2200 pF
0.1 µF
Ceramic
t
should be used.
90%
D2
10%
90%
t
F