DSPIC30F3010-20E/SP Microchip Technology, DSPIC30F3010-20E/SP Datasheet - Page 60
![IC,DSP,16-BIT,CMOS,DIP,28PIN,PLASTIC](/photos/6/59/65908/150-28-dip_sml.jpg)
DSPIC30F3010-20E/SP
Manufacturer Part Number
DSPIC30F3010-20E/SP
Description
IC,DSP,16-BIT,CMOS,DIP,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F2011-20IP.pdf
(26 pages)
3.DSPIC30F3010-30ISO.pdf
(228 pages)
4.DSPIC30F3010-30ISO.pdf
(18 pages)
5.DSPIC30F3010-30ISO.pdf
(6 pages)
6.DSPIC30F3010-30ISO.pdf
(16 pages)
7.DSPIC30F3010-30ISO.pdf
(22 pages)
Specifications of DSPIC30F3010-20E/SP
Rohs Compliant
YES
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
24KB (8K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F2011-20IP PDF datasheet #2
- DSPIC30F3010-30ISO PDF datasheet #3
- DSPIC30F3010-30ISO PDF datasheet #4
- DSPIC30F3010-30ISO PDF datasheet #5
- DSPIC30F3010-30ISO PDF datasheet #6
- DSPIC30F3010-30ISO PDF datasheet #7
- Current page: 60 of 228
- Download datasheet (4Mb)
dsPIC30F3010/3011
7.3.2
To write a block of data EEPROM, write to all sixteen
latches first, then set the NVMCON register and
program the block.
EXAMPLE 7-5:
7.4
Depending on the application, good programming
practice may dictate that the value written to the
memory should be verified against the original value.
This should be used in applications where excessive
writes can stress bits near the specification limit.
DS70141F-page 60
MOV
MOV
MOV
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
Write Verify
WRITING A BLOCK OF DATA
EEPROM
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
W1
#data1,W2
W2
#data2,W2
W2
#data3,W2
W2
#data4,W2
W2
#data5,W2
W2
#data6,W2
W2
#data7,W2
W2
#data8,W2
W2
#data9,W2
W2
#data10,W2
W2
#data11,W2
W2
#data12,W2
W2
#data13,W2
W2
#data14,W2
W2
#data15,W2
W2
#data16,W2
W2
#0x400A,W0
W0
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
TBLPAG
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
NVMCON
NVMKEY
NVMKEY
DATA EEPROM BLOCK WRITE
; Init pointer
; Get 1st data
; write data
; Get 2nd data
; write data
; Get 3rd data
; write data
; Get 4th data
; write data
; Get 5th data
; write data
; Get 6th data
; write data
; Get 7th data
; write data
; Get 8th data
; write data
; Get 9th data
; write data
; Get 10th data
; write data
; Get 11th data
; write data
; Get 12th data
; write data
; Get 13th data
; write data
; Get 14th data
; write data
; Get 15th data
; write data
; Get 16th data
; write data. The NVMADR captures last table access address.
; Select data EEPROM for multi word op
; Operate Key to allow program operation
; Block all interrupts with priority <7
; for next 5 instructions
; Write the 0x55 key
; Write the 0xAA key
; Start write cycle
7.5
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared;
also, the Power-up Timer prevents EEPROM write.
The write initiate sequence, and the WREN bit
together, help prevent an accidental write during
brown-out, power glitch or software malfunction.
Protection Against Spurious Write
© 2010 Microchip Technology Inc.
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