SAF-XC878CM-16FFI Infineon Technologies, SAF-XC878CM-16FFI Datasheet - Page 65
![MCU, 8BIT, 64K FLASH, 5V, 64LQFP](/photos/19/1/190186/ge64lqfp05-40_sml.jpg)
SAF-XC878CM-16FFI
Manufacturer Part Number
SAF-XC878CM-16FFI
Description
MCU, 8BIT, 64K FLASH, 5V, 64LQFP
Manufacturer
Infineon Technologies
Datasheet
1.SAF-XC878CM-16FFI.pdf
(146 pages)
Specifications of SAF-XC878CM-16FFI
Controller Family/series
XC800
Core Size
8bit
Program Memory Size
64KB
Ram Memory Size
3328Byte
No. Of Timers
4
No. Of Pwm Channels
10
Digital Ic Case Style
LQFP
Supply Voltage Range
4.5V To
Peripherals
ADC, PWM, Timer
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SAF-XC878CM-16FFI 3V3 AA
Manufacturer:
Infineon Technologies
Quantity:
10 000
Company:
Part Number:
SAF-XC878CM-16FFI 3V3 AC
Manufacturer:
Infineon Technologies
Quantity:
10 000
Company:
Part Number:
SAF-XC878CM-16FFI 5V AA
Manufacturer:
Infineon Technologies
Quantity:
10 000
Part Number:
SAF-XC878CM-16FFI 5V AA
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SAF-XC878CM-16FFI 5V AC
Manufacturer:
Infineon Technologies
Quantity:
10 000
Part Number:
SAF-XC878CM-16FFI5VAC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
3.3
The Flash memory provides an embedded user-programmable non-volatile memory,
allowing fast and reliable storage of user code and data. It is operated from a single 2.5 V
supply from the Embedded Voltage Regulator (EVR) and does not require additional
programming or erasing voltage. The pagination of the Flash memory allows each page
to be erased independently.
Features
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1) Values shown here are typical values.
2) Values shown here are typical values.
Data Sheet
frequency range for Flash read access.
range for Flash programming and erasing.
In-System Programming (ISP) via UART
In-Application Programming (IAP)
Error Correction Code (ECC) for dynamic correction of single-bit errors
Background program and erase operations for CPU load minimization
Support for aborting erase operation
Minimum program width
1-page minimum erase width
1-byte read access
Flash is delivered in erased state (read all ones)
Operating supply voltage: 2.5 V ± 7.5 %
Read access time: 1 ×
Program time for 1 wordline: 1.6 ms
Page erase time: 20 ms
Mass erase time: 200 ms
of 1-byte for D-Flash and 2-bytes for P-Flash
Flash Memory
t
CCLK
= 38 ns
f
sys
= 144 MHz ± 7.5% (
f
sys
f
sysmin
= 144 MHz ± 7.5% (
2)
1)
is used for obtaining the worst case timing.
56
f
CCLK
f
CCLK
= 24 MHz ± 7.5 %) is the typical frequency
= 24 MHz ± 7.5 %) is the maximum
Functional Description
XC878CLM
V1.2, 2009-11