HY27UF084G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF084G2B-TPCB Datasheet - Page 25

• Manufacturer Part Number: HY27UF084G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 4GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF084G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Parallel
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 512M X 8
• Rohs Compliant: Yes

Rev 0.4 / Jan. 2008
Table 21: Page organization in EDC units (x16)
IO
0
1
2
3
4
5
6
7
Table 20: Page organization in EDC units (x8)
Copy back Program
Table 22: EDC Register Coding
Write Protect
EDC Validity
Ready/Busy
Ready/Busy
EDC status
Pass/Fail
NA
NA
Protected: ‘0’ Not Protected: ‘1’
4Gbit (512Mx8bit) NAND Flash
Invalid: ‘0’ Valid: ‘1’
Busy: ‘0’ Ready: ‘1’
Busy: ‘0’ Ready: ‘1’
HY27UF(08/16)4G2B Series
Pass: Fail: ‘1’
NO error: ‘0’
CODING
-
-
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