HY27UF084G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF084G2B-TPCB Datasheet - Page 20

• Manufacturer Part Number: HY27UF084G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 4GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF084G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Parallel
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 512M X 8
• Rohs Compliant: Yes

Rev 0.4 / Jan. 2008
Input / Output Capacitance
Input Capacitance
Program Time / Multi-Plane Program Time
Dummy Busy Time for Two Plane Program
Number of partial Program Cycles in the same page
Block Erase Time / Multi-Plane Block Erase Time
Read Cache Busy Time
Item
Table 12: Program / Erase Characteristics
Table 11: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
Test Condition
V
V
IN
IL
=0V
=0V
4Gbit (512Mx8bit) NAND Flash
Symbol
HY27UF(08/16)4G2B Series
t
t
t
t
NOP
PROG
DBSY
BERS
RBSY
Min
Min
-
-
-
-
-
-
-
Typ
200
0.5
1.5
3
-
Max
10
10
Max
700
tR
1
2
8
Unit
Cycles
pF
pF
Unit
ms
us
us
us
20