BGU7033,115 NXP Semiconductors, BGU7033,115 Datasheet - Page 6

IC AMPLIFIER MMIC LNA SOT363

BGU7033,115

Manufacturer Part Number
BGU7033,115
Description
IC AMPLIFIER MMIC LNA SOT363
Manufacturer
NXP Semiconductors
Type
Monolithic Microwave Integrated Circuit (MMIC)r
Datasheet

Specifications of BGU7033,115

Current - Supply
43mA
Frequency
40MHz ~ 1GHz
Gain
10dB
Noise Figure
6dB
P1db
14dBm
Package / Case
6-TSSOP, SC-88, SOT-363
Rf Type
General Purpose
Test Frequency
1GHz
Voltage - Supply
4.75 V ~ 5.5 V
Operating Frequency
1 GHz
Operating Supply Voltage
24 V
Supply Current
43 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 10 C
Number Of Channels
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5508-2
NXP Semiconductors
BGU7033
Product data sheet
8.2 Application circuit board layout
Table 9.
See
[1]
Component
C1, C2
C3, C4, C5
C6
L1
R1
R2, R3
X1, X2
Fig 2.
RF_IN
L1 and R1 must have a power rating of 0.1 W or higher.
Figure 1
BGU7033 application circuit board layout
PCB material = FR4.
PCB thickness = 1.6 mm.
PCB size = 30 mm × 30 mm.
ε
Components are listed in
r
List of components
= 4.5; thickness of copper layer = 35 μm.
and
Description
capacitor
capacitor
capacitor
chip ferrite bead
resistor
resistor
connector
X1
All information provided in this document is subject to legal disclaimers.
Figure
Rev. 2 — 13 September 2010
2.
Table
Value
10 nF
10 nF
10 μF
1.5 kΩ
43 Ω
1.8 kΩ
75 Ω
9.
C1
C3
1 GHz wideband low-noise amplifier with bypass
[1]
[1]
R2
R3
C4
Remarks
Murata BLM18HE152SN1DF
R
F-connector, edge mount PCB
reflow type, Bomar 861V509ERG
bias
L1
C6
R1
C5
C2
BGU7033
X2
© NXP B.V. 2010. All rights reserved.
Function
DC blocking
decoupling
decoupling
RF choke
bias setting
current limiting
input/output
001aam387
RF_OUT
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