NAND512W3A2SN6E NUMONYX, NAND512W3A2SN6E Datasheet - Page 47

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NAND512W3A2SN6E

Manufacturer Part Number
NAND512W3A2SN6E
Description
IC FLASH 512MBUT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND512W3A2SN6E

Format - Memory
FLASH
Memory Type
FLASH - NAND
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

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Numonyx SLC SP 70 nm
11
Figure 35. TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline
1. Drawing is not to scale.
Table 23.
Symbol
CP
A1
A2
D1
E1
L1
A
B
C
E
α
e
L
Package mechanical
To meet environmental requirements, Numonyx offers these devices in RoHS compliant
packages, which have a lead-free second-level interconnect. The category of second-level
interconnect is marked on the package and on the inner box label, in compliance with
JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label.
RoHS compliant specifications are available at www.numonyx.com.
TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, mechanical data
D1
DIE
24
1
12.00
20.00
18.40
0.10
1.00
0.22
0.50
0.60
0.80
Typ
millimeters
E1
11.90
19.80
18.30
E
0.05
0.95
0.17
0.50
0.10
Min
210403 - Rev 2
12.10
20.20
18.50
Max
1.20
0.15
1.05
0.27
0.21
0.08
0.70
48
25
C
B
e
A2
CP
0.004
0.039
0.009
0.472
0.787
0.724
0.020
0.024
0.031
Typ
A1
L1
inches
0.002
0.037
0.007
0.004
0.468
0.779
0.720
0.020
L
Min
Package mechanical
TSOP-G
A
0.006
0.041
0.011
0.003
0.476
0.795
0.728
0.028
0.047
0.008
Max
47/51

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