STM32F105VBH6 STMicroelectronics, STM32F105VBH6 Datasheet - Page 69

• Manufacturer Part Number: STM32F105VBH6
• Description: IC ARM CORTEX MCU 128KB 100LFBGA
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F105VBH6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART, USB OTG
• Peripherals: DMA, POR, PWM, Voltage Detect, WDT
• Number Of I /o: 80
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 16x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LFBGA
• Core: ARM Cortex M3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

STM32F105xx, STM32F107xx
Table 46.
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Ethernet characteristics
Table 47
Table 47.
1. All the voltages are measured from the local ground potential.
Table 48
and
Figure 31. Ethernet SMI timing diagram
Table 48.
Table 49
corresponding timing diagram.
t
t
t
t
Symbol
MDC
d(MDIO)
su(MDIO)
h(MDIO)
Input level
Symbol
V
Specification - Chapter 7 (version 2.0).
t
Figure 31
CRS
rfm
t
t
r
f
Symbol
ETH_MDC
ETH_MDIO(O)
ETH_MDIO(I)
showns the Ethernet operating voltage.
gives the list of Ethernet MAC signals for the SMI (station management interface)
gives the list of Ethernet MAC signals for the RMII and
MDC cycle time (1.71 MHz, AHB = 72 MHz)
MDIO write data valid time
Read data setup time
Read data hold time
Rise time
Fall time
Rise/ fall time matching
Output signal crossover voltage
USB OTG FS electrical characteristics
Ethernet DC electrical characteristics
Dynamic characteristics: Ethernet MAC signals for SMI
shows the corresponding timing diagram.
V
DD
(2)
(2)
Parameter
Ethernet operating voltage
Rating
Doc ID 15274 Rev 5
Driver characteristics
Parameter
t
d(MDIO)
Conditions
C
C
L
L
t
t
= 50 pF
= 50 pF
su(MDIO)
MDC
(1)
t
r
/t
f
13.5
Min
583
35
0
Min
1.3
90
Figure 32
4
4
Electrical characteristics
Min.
583.5
14.5
Typ
3.0
(1)
t
h(MDIO)
Max
110
2.0
shows the
20
20
Max.
Max
15.5
584
3.6
ai15666c
(1)
Unit
ns
ns
%
V
69/101
Unit
Unit
ns
ns
ns
ns
V