EM773FHN33,551 NXP Semiconductors, EM773FHN33,551 Datasheet - Page 31

IC ENERGY METER ARM 32VQFN

EM773FHN33,551

Manufacturer Part Number
EM773FHN33,551
Description
IC ENERGY METER ARM 32VQFN
Manufacturer
NXP Semiconductors
Datasheet

Specifications of EM773FHN33,551

Core Processor
ARM Cortex-M0
Core Size
32-Bit
Speed
48MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
25
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VQFN Exposed Pad
Output Voltage
3.6 V
Output Current
20 mA
Output Power
1.5 W
Input Voltage
1.8 V to 3.6 V
Switching Frequency
48 MHz
Operating Temperature Range
- 40 C to + 85 C
Mounting Style
SMD/SMT
Duty Cycle (max)
50 %
Number Of Outputs
10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-5213
NXP Semiconductors
EM773
Objective data sheet
10.3 Internal oscillators
Table 8.
T
[1]
[2]
Table 9.
[1]
[2]
[3]
Symbol
f
Symbol Parameter
f
osc(RC)
osc
amb
Fig 17. Internal RC oscillator frequency vs. temperature
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 °C), nominal supply
voltages.
Typical ratings are not guaranteed. The values listed are at room temperature (25 °C), nominal supply
voltages.
The typical frequency spread over processing and temperature (T
See the EM773 user manual.
=
(MHz)
12.15
12.05
11.95
11.85
40
f
internal oscillator
frequency
Conditions: Frequency values are typical values. 12 MHz ± 1 % accuracy is guaranteed for
2.7 V ≤ V
fall outside the 12 MHz ± 1 % accuracy specification for voltages below 2.7 V.
°
Parameter
internal RC oscillator frequency -
Dynamic characteristic: internal oscillators
−40
Dynamic characteristics: Watchdog oscillator
C to +85
All information provided in this document is subject to legal disclaimers.
DD
°
≤ 3.6 V and T
C; 2.7 V
VDD = 3.6 V
Rev. 1 — 1 September 2010
−15
3.3 V
3.0 V
2.7 V
2.4 V
2.0 V
Conditions
DIVSEL = 0x1F, FREQSEL = 0x1
in the WDTOSCCTRL register;
DIVSEL = 0x00, FREQSEL = 0xF
in the WDTOSCCTRL register
V
amb
DD
= −40 °C to +85 °C. Variations between parts may cause the IRC to
3.6 V.
10
Conditions
[1]
35
Min
11.88
amb
[2][3]
[2][3]
= −40 °C to +85 °C) is ±40 %.
Min
-
-
60
Typ
12
temperature (°C)
[2]
Energy metering IC
Typ
7.8
1700
© NXP B.V. 2010. All rights reserved.
002aaf403
[1]
Max
12.12
EM773
85
Max
-
-
31 of 45
Unit
MHz
Unit
kHz
kHz

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