EM773FHN33,551 NXP Semiconductors, EM773FHN33,551 Datasheet - Page 20

• Manufacturer Part Number: EM773FHN33,551
• Description: IC ENERGY METER ARM 32VQFN
• Manufacturer: NXP Semiconductors

Specifications of EM773FHN33,551

• Core Processor: ARM Cortex-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 25
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-VQFN Exposed Pad
• Output Voltage: 3.6 V
• Output Current: 20 mA
• Output Power: 1.5 W
• Input Voltage: 1.8 V to 3.6 V
• Switching Frequency: 48 MHz
• Operating Temperature Range: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Duty Cycle (max): 50 %
• Number Of Outputs: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-5213

NXP Semiconductors
Table 4.
T
EM773
Objective data sheet
Symbol
I
I
I
I
I
I
High-drive output pin (PIO0_7)
I
I
I
V
V
V
V
V
V
V
I
OH
OL
OHS
OLS
pd
pu
IL
IH
OZ
OH
amb
I
O
IH
IL
hys
OH
OL
=
−
40
°
Static characteristics
C to +85
Parameter
HIGH-level output
current
LOW-level output
current
HIGH-level short-circuit
output current
LOW-level short-circuit
output current
pull-down current
pull-up current
LOW-level input current V
HIGH-level input
current
OFF-state output
current
input voltage
output voltage
HIGH-level input
voltage
LOW-level input voltage
hysteresis voltage
HIGH-level output
voltage
LOW-level output
voltage
HIGH-level output
current
°
C, unless otherwise specified.
…continued
All information provided in this document is subject to legal disclaimers.
Conditions
V
V
V
V
V
V
V
resistor disabled
V
pull-down resistor
disabled
V
on-chip pull-up/down
resistors disabled
pin configured to provide
a digital function
output active
2.5 V ≤ V
I
1.8 V ≤ V
I
2.0 V ≤ V
I
1.8 V ≤ V
I
V
2.5 V ≤ V
1.8 V ≤ V
OH
OH
OL
OL
OH
OL
OH
OL
I
I
DD
I
I
O
OH
2.0 V ≤ V
1.8 V ≤ V
2.0 V ≤ V
1.8 V ≤ V
2.0 V ≤ V
1.8 V ≤ V
= 5 V
= 0 V;
= 0 V; on-chip pull-up
= V
= 0 V; V
= 4 mA
= 3 mA
= −20 mA
= −12 mA
= 0.4 V
= V
< V
= V
= 0 V
= V
Rev. 1 — 1 September 2010
DD
DD
I
DD
DD
; on-chip
< 5 V
DD
DD
DD
DD
DD
DD
− 0.4 V;
− 0.4 V;
DD
DD
DD
DD
DD
DD
O
< 2.5 V;
< 2.0 V;
≤ 3.6 V;
≤ 3.6 V;
≤ 3.6 V
< 2.5 V
= V
< 2.0 V
< 2.0 V
< 2.0 V
≤ 3.6 V
≤ 3.6 V
≤ 3.6 V
DD
;
[10][11]
[13]
[13]
[12]
Min
−4
−3
4
3
-
-
10
−15
−10
0
-
-
-
0
0
0.7V
-
0.4
V
V
-
-
20
12
DD
DD
− 0.4
− 0.4
DD
Typ
-
-
-
-
-
-
50
−50
−50
0
0.5
0.5
0.5
-
-
-
-
-
-
-
-
-
-
-
[1]
Energy metering IC
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
-
−45
50
150
−85
−85
0
10
10
10
5.0
V
-
0.3V
-
-
-
0.4
0.4
-
-
DD
EM773
DD
20 of 45
Unit
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
nA
nA
nA
V
V
V
V
V
V
V
V
V
mA
mA